Prepare for a leap in-memory technology as Samsung unveils its latest innovation: the HBM3E 12H DRAM, equipped with advanced TC NCF technology. While the jargon may seem overwhelming, let’s break it down to understand the significance of this breakthrough.
Firstly, HBM, or high bandwidth memory, lives up to its name by delivering lightning-fast data transfer speeds. In this latest iteration, Samsung has pushed the boundaries even further with the introduction of HBM3E Shinebolt, boasting an impressive 9.8Gbps per pin and a staggering 1.2 terabytes per second for the entire package.
Moving on to the “12H” designation, this simply refers to the number of vertically stacked chips within each module. By increasing the number of chips to 12, Samsung has achieved a remarkable 36GB capacity, a 50% improvement over previous 8H designs. Despite this increase in capacity, bandwidth remains consistent at 1.2 terabytes per second.
Now, let’s dive into TC NCF or Thermal Compression Non-Conductive Film. This crucial component layered between the stacked chips, has undergone significant refinement, now measuring just 7µm in thickness. This allows for a 12H stack to maintain a similar height to an 8H stack, enabling the use of existing HBM packaging while enhancing thermal properties for improved cooling. Additionally, Samsung’s advancements in TC NCF technology have led to improved yields, ensuring greater efficiency in production.
But what does all this mean for end-users? In a word: performance. With the exponential growth of AI applications, the demand for high-capacity, high-speed memory has never been greater. Samsung’s HBM3E 12H DRAM is poised to meet this demand head-on, offering a significant boost in AI training speeds and enabling inference services to handle a staggering increase in workload.
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Take, for example, Nvidia’s H200 Tensor Core GPU, which leverages Samsung’s HBM3E memory to achieve unprecedented performance levels. With the ability to accommodate six 24GB HBM3E 8H modules, the H200 GPU boasts a total of 141GB of memory running at an astounding 4.8 terabytes per second – a feat unmatched by consumer GPUs utilizing GDDR memory.
With the AI revolution showing no signs of slowing down, demand for memory solutions like Samsung’s HBM3E 12H DRAM is only expected to soar. As companies scramble to meet the growing need for high-performance accelerators, memory suppliers like Samsung, Micron, and SK Hynix are well-positioned to capitalize on this lucrative market. In essence, the race for superior memory technology has never been more intense – and Samsung is leading the charge.